Calidad de Cu3N según la temperatura de depósito

Wilbert Frías-Gómez; Eduardo Camacho- Espinosa; Ricardo Mis-Fernández; Mariely Loeza-Poot; Pascual Bartolo-Pérez; Eduardo Flores-Cuevas

doi:10.29057/icbi.v12iEspecial5.13704

Autores/as

Wilbert Frías-Gómez Universidad Tecnológica Metropolitana | Mérida https://orcid.org/0009-0000-3279-5205
Eduardo Camacho- Espinosa Centro de Investigación y de Estudios Avanzados del IPN-Unidad Mérida
Ricardo Mis-Fernández Centro de Investigación y de Estudios Avanzados del IPN-Unidad Mérida https://orcid.org/0000-0002-8095-1644
Mariely Loeza-Poot Centro de Investigación y de Estudios Avanzados del IPN-Unidad Mérida https://orcid.org/0000-0003-4706-7985
Pascual Bartolo-Pérez Centro de Investigación y de Estudios Avanzados del IPN-Unidad Mérida https://orcid.org/0000-0003-3685-633X
Eduardo Flores-Cuevas Centro de Investigación y de Estudios Avanzados del IPN-Unidad Mérida https://orcid.org/0000-0003-4769-0873

DOI:

https://doi.org/10.29057/icbi.v12iEspecial5.13704

Palabras clave:

Cu3N, película delgada, erosion catódica, temperatura

Resumen

El nitruro de cobre (Cu₃N) es un material prometedor en aplicaciones como la microelectrónica y energías renovables, donde su optimización depende de entender cómo las condiciones de depósito afectan sus propiedades. En este estudio se utilizó la técnica de erosión catódica reactiva para depositar películas delgadas de Cu₃N a temperaturas desde ambiente hasta 300 °C y se analizaron sus propiedades estructurales, ópticas y eléctricas mediante las técnicas de XRD, espectrofotometría VIS-NIR y efecto Hall, respectivamente. Se observó que la resistividad disminuye y la movilidad de portadores aumenta con la temperatura, alcanzando valores característicos de los metales a 300 °C. A esta temperatura, se evidencia una descomposición parcial del Cu₃N en cobre metálico, lo que se refleja en una baja transmitancia y picos que identifican al Cu en difracción de rayos x. Estos resultados sugieren que ajustar la temperatura de depósito puede modificar las propiedades optoelectrónicas de las películas de Cu₃N, lo que es relevante para el desarrollo de dispositivos semiconductores.

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Citas

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