Metal phthalocyanines as organic semiconductor layer in optoelectronic devices

Ingrid Sofía Rincón von Pastor; María Elena Sánchez Vergara; Luis Alberto Cantera Cantera

doi:10.29057/icbi.v14iEspecial.15346

Autores/as

Ingrid Sofía Rincón von Pastor Universidad Anáhuac https://orcid.org/0009-0005-0381-5779
María Elena Sánchez Vergara Universidad Anáhuac https://orcid.org/0000-0002-7163-6175
Luis Alberto Cantera Cantera Instituto Politécnico Nacional https://orcid.org/0000-0003-2828-6779

DOI:

https://doi.org/10.29057/icbi.v14iEspecial.15346

Palabras clave:

Ftalocianina Metálica, Película Semiconductora, Dispositivo Orgánico, Comportamiento Eléctrico

Resumen

Se fabricaron dispositivos con ftalocianinas metálicas donantes (MFt; M=Co, Cu) y el aceptor electrónico tetraciano-π-quinodimetano (TCNQ), como componentes de la capa activa con arquitectura de heterounión en masa (HM). Inicialmente, estas capas MFt+TCNQ se estudiaron en su comportamiento óptico y posteriormente, se fabricaron los dispositivos utilizando óxido de indio y estaño (ITO: In₂O₃(SnO₂)_x) como ánodo, y Ag como cátodo. Para optimizar los dispositivos, se adicionaron con arquitectura de heterojunción plana (HP), capas transportadoras de huecos y electrones de pentaceno y batocuproína respectivamente. El estudio del comportamiento eléctrico mostró que tanto la irradiación con diferentes longitudes de onda, como el cambio en la polaridad de los electrodos, modifica el transporte de cargas, lo anterior está relacionado con el tipo de ftalocianina del dispositivo. En el caso del dispositivo con CoFt el comportamiento es óhmico, y en el dispositivo con CuFt este comportamiento se da a bajos voltajes, y a mayores, el comportamiento cambia a corriente limitada por carga espacial (SCLC).

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