Efecto del tratamiento térmico a baja temperatura para la obtención de películas delgadas de SnO

Palabras clave: óxido de estaño, óxido semiconductor tipo-p, pulverización catódica reactiva, recocido a baja temperatura, electrónica flexible

Resumen

Por sus ventajas, el SnO es un óxido semiconductor (OMS) usado en transistores de película delgada (TFTs) de canal-p y considerado para aplicaciones flexibles y transparentes. Aunque se deposita por varias técnicas, suele aplicarse un recocido >200 °C para obtenerlo, que es incompatible con la fabricación de TFTs con OMS tipo-n y con sustratos flexibles y transparentes. Aquí mostramos el efecto de la presión parcial de oxígeno (OPP) y del recocido ≤200 °C en las propiedades estructurales, ópticas, composicionales y eléctricas de las capas depositadas por pulverización catódica. Una OPP al 9% y un recocido entre 190 y 200 °C indujeron una mezcla de fases entre el estaño metálico y el SnO con orientación hacia diferentes planos, una transmitancia hasta de 36% en el espectro UV/Vis, un ancho de banda óptico de ~2.83 eV y una resistividad de 1 mΩ×cm. Esto coincide con los datos reportados del SnO tipo-p, lo que también posibilita su compatibilidad con la fabricación de TFTs con OMS tipo-n.

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Citas

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Publicado
2021-12-12
Cómo citar
Garduño, S. I., Martínez-Arreola, S., Hernández-Como, N., Rodríguez-Lugo, V., & Estrada, M. (2021). Efecto del tratamiento térmico a baja temperatura para la obtención de películas delgadas de SnO. Pädi Boletín Científico De Ciencias Básicas E Ingenierías Del ICBI, 9(Especial2), 110-118. https://doi.org/10.29057/icbi.v9iEspecial2.7785

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