Efecto del tratamiento térmico a baja temperatura para la obtención de películas delgadas de SnO

Salvador Ivan Garduño; Samuel Martínez-Arreola; Norberto Hernández-Como; Ventura Rodríguez-Lugo; Magali Estrada

doi:10.29057/icbi.v9iEspecial2.7785

Salvador Ivan Garduño Universidad Autónoma del Estado de Hidalgo https://orcid.org/0000-0003-0101-6285
Samuel Martínez-Arreola Instituto Politécnico Nacional
Norberto Hernández-Como Instituto Politécnico Nacional https://orcid.org/0000-0003-0964-397X
Ventura Rodríguez-Lugo Universidad Autónoma del Estado de Hidalgo https://orcid.org/0000-0001-8767-032X
Magali Estrada Instituto Politécnico Nacional https://orcid.org/0000-0002-6244-6492

DOI: https://doi.org/10.29057/icbi.v9iEspecial2.7785

Palabras clave: óxido de estaño, óxido semiconductor tipo-p, pulverización catódica reactiva, recocido a baja temperatura, electrónica flexible

Resumen

Por sus ventajas, el SnO es un óxido semiconductor (OMS) usado en transistores de película delgada (TFTs) de canal-p y considerado para aplicaciones flexibles y transparentes. Aunque se deposita por varias técnicas, suele aplicarse un recocido >200 °C para obtenerlo, que es incompatible con la fabricación de TFTs con OMS tipo-n y con sustratos flexibles y transparentes. Aquí mostramos el efecto de la presión parcial de oxígeno (O_PP) y del recocido ≤200 °C en las propiedades estructurales, ópticas, composicionales y eléctricas de las capas depositadas por pulverización catódica. Una O_PP al 9% y un recocido entre 190 y 200 °C indujeron una mezcla de fases entre el estaño metálico y el SnO con orientación hacia diferentes planos, una transmitancia hasta de 36% en el espectro UV/Vis, un ancho de banda óptico de ~2.83 eV y una resistividad de 1 mΩ×cm. Esto coincide con los datos reportados del SnO tipo-p, lo que también posibilita su compatibilidad con la fabricación de TFTs con OMS tipo-n.

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