Silicon Surfice Morofology Modification thorough Oxigen’s Ions Bombardment
Keywords:
ion bombardment, nanopatterning, surfaces, oxygen bombardment
Abstract
In this work, the study of nanopatterning formation dynamics of surfaces under ion bombardment was carried out. The bombardment was performed on silicon (Si) surfaces at room temperature by using a positive ion beam of diatomic oxygen (O2+). The energy of the ion beam used was 2 keV and the angle of incidence of 45 °. The ion dose was varied in the range between 1.25x1018 ions/cm2 and 7.5 x1018 ions/cm2. The results showed that the regime used causes the formation of nanometric structures with a pyramidal shape. The nanopatterns behaves accordingly to the linear models.
Downloads
Download data is not yet available.
References
[1] E.S. Mashkova, V.A. Molchanov, Medium-energy ion scattering by solid surfaces. Part I, Radiat. Eff. 16 (1972) 143–187. doi:10.1080/00337577208231218.
[2] E.S. Mashkova, V.A. Molchanov, Medium-energy ion scattering by solid surfaces part II, Radiat. Eff. 23 (1974) 215–270. doi:10.1080/00337577408244188.
[3] M.V.R. Murty, Sputtering: the material erosion tool, Surf. Sci. 500 (2002) 523–544. doi:10.1016/S0039-6028(01)01586-2.
[4] J. Erlebacher, M.J. Aziz, E. Chason, M.B. Sinclair, J.A. Floro, Spontaneous Pattern Formation on Ion Bombarded Si(001), Phys. Rev. Lett. 82 (1999) 2330–2333. doi:10.1103/PhysRevLett.82.2330.
[5] Facsko, Dekorsy, Koerdt, Trappe, Kurz, Vogt, Hartnagel, Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering., Science. 285 (1999) 1551–1553. http://www.ncbi.nlm.nih.gov/pubmed/10477516 (accessed June 11, 2017).
[6] M. Teichmann, J. Lorbeer, B. Ziberi, F. Frost, B. Rauschenbach, Pattern formation on Ge by low energy ion beam erosion, New J. Phys. 15 (2013) 103029. doi:10.1088/1367-2630/15/10/103029.
[7] J.J. Vajo, R.E. Doty, E. Cirlin, Influence of O + 2 energy, flux, and fluence on the formation and growth of sputtering?induced ripple topography on silicon, J. Vac. Sci. Technol. A Vacuum, Surfaces, Film. 14 (1996) 2709–2720. doi:10.1116/1.580192.
[8] J. Shen, J. Kirschner, Tailoring magnetism in artificially structured materials: the new frontier, Surf. Sci. 500 (2002) 300–322. doi:10.1016/S0039-6028(01)01557-6.
[9] E. Doktorgrades, Mechanisms and Manipulation of Ion Beam Pattern Formation on Si ( 001 ) Sven Macko aus Duisburg, (2011).
[2] E.S. Mashkova, V.A. Molchanov, Medium-energy ion scattering by solid surfaces part II, Radiat. Eff. 23 (1974) 215–270. doi:10.1080/00337577408244188.
[3] M.V.R. Murty, Sputtering: the material erosion tool, Surf. Sci. 500 (2002) 523–544. doi:10.1016/S0039-6028(01)01586-2.
[4] J. Erlebacher, M.J. Aziz, E. Chason, M.B. Sinclair, J.A. Floro, Spontaneous Pattern Formation on Ion Bombarded Si(001), Phys. Rev. Lett. 82 (1999) 2330–2333. doi:10.1103/PhysRevLett.82.2330.
[5] Facsko, Dekorsy, Koerdt, Trappe, Kurz, Vogt, Hartnagel, Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering., Science. 285 (1999) 1551–1553. http://www.ncbi.nlm.nih.gov/pubmed/10477516 (accessed June 11, 2017).
[6] M. Teichmann, J. Lorbeer, B. Ziberi, F. Frost, B. Rauschenbach, Pattern formation on Ge by low energy ion beam erosion, New J. Phys. 15 (2013) 103029. doi:10.1088/1367-2630/15/10/103029.
[7] J.J. Vajo, R.E. Doty, E. Cirlin, Influence of O + 2 energy, flux, and fluence on the formation and growth of sputtering?induced ripple topography on silicon, J. Vac. Sci. Technol. A Vacuum, Surfaces, Film. 14 (1996) 2709–2720. doi:10.1116/1.580192.
[8] J. Shen, J. Kirschner, Tailoring magnetism in artificially structured materials: the new frontier, Surf. Sci. 500 (2002) 300–322. doi:10.1016/S0039-6028(01)01557-6.
[9] E. Doktorgrades, Mechanisms and Manipulation of Ion Beam Pattern Formation on Si ( 001 ) Sven Macko aus Duisburg, (2011).
Published
2019-01-05
How to Cite
Hernández, A., Tangirala, V. K. K., Asomoza-Palacio, R., & Kudriavtsev, Y. (2019). Silicon Surfice Morofology Modification thorough Oxigen’s Ions Bombardment. TEPEXI Boletín Científico De La Escuela Superior Tepeji Del Río, 6(11), 20-24. https://doi.org/10.29057/estr.v6i11.3821
Section
Article
