Fin field effect transistors for digital applications
Abstract
The aim of this work is providing to students of electronics, computing and related areas, an overview of the construction and behavior of fin field effect transistors (FinFETs), which are tiny devices, with gate length in the nanometer range, they are manufactured using the silicon-on-insulator (SOI) technique. Using FinFETs type n and p, the schematic diagrams and layouts of the basic logic gates were designed, this kind of gates are the basis for the design and construction of most of the digital electronic devices used in modern electronic devices, mainly portable ones. With the exceedingly small sizes of FinFETs, all microprocessors, DSPs, memories and the chips of cell phones and tablets are manufactured from the most important electronic companies in the world.
Downloads
References
Bhattacharya, D., & Jha, N. K. (2014). FinFETs: From Devices to Architectures. Advances in Electronics, 2014, 21. doi:http://dx.doi.org/10.1155/2014/365689
Boned, M., Borja, F. D., & García Moreno, E. (2010). Transistores FinFET. En U. d. Balears (Ed.), Treballs Docents curs 2009/2010 (págs. 5-8). Revista de l'Escola Politècnica Superior. Obtenido de https://dialnet.unirioja.es/servlet/articulo?codigo=6399564
Chen, M.-L., Sun, X., Liu, H., Wang, H., Zhu, Q., S. W., . . . Han, Z. (2020). A FinFET with one atomic layer channel. NATURE COMMUNICATIONS, 11(1205), 1-7. doi:10.1038/s41467-020-15096-0
Ensan, S. S., Moaiyeri, M. H., Moghaddam, M., & Hessabi, S. (February de 2019). A Low-Power Single-Ended SRAM in FinFET Technology. International Journal of Electronics and Communications, 99, 361-368. doi:https://doi.org/10.1016/j.aeue.2018.12.015
Hisamoto, D., Lee, W.-C., Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., . . . Hu, C. (DECEMBER de 2000). FinFET—A Self-Aligned Double-Gate MOSFET. (IEEE, Ed.) IEEE TRANSACTIONS ON ELECTRON DEVICES, 47 (12), 2320-2325. doi:10.1109/TED.2000.887050
Huang, B., Bai, X., Lam, S. K., & Kim, S. J. (February de 2020). Diamond lateral FinFET with triode-like. Scientific Reports , 10(2279), 1-5. doi:10.1038/s41598-020-59049-5
Lan, Y.-W., Chen, P.-C., Lin, Y.-Y., Li, M.-Y., & Li, L.-J. (2019). Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors. Nanoscale Horizons, Horizons Community Board Collection – Emerging 2D Materials for Energy and Electronics Applications, 4, 683-688. doi:10.1039/c8nh00419f
Liu, X., Shang, J., Sun, X., Wu, M., Jin, X., & Lee, J.-H. (June de 2019). A novel high-performance fold I shaped junctionless FinFET. (T. &. Francis, Ed.) International Journal of Electronics Letters, 8, 2020 - Issue 4 (4), 1-10. doi:10.1080/21681724.2019.1625962
López, J. (25 de Agosto de 2020). TSMC deja obsoleta a Intel y Samsung: sus 3 nm estarán listos en 2022. Obtenido de
https://hardzone.es/noticias/procesadores/tsmc-5-nm-3-nm-2021/
Pedram, M., Li, J., Wang, Y., Nazarian, S., & Pedram, M. (June de 2016). An Exploration of Applying Gate-Length-Biasing Techniques to Deeply-Scaled FinFETs Operating in Multiple Voltage Regimes. IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING, 6(2), 72 - 183. doi:10.1109/TETC.2016.2640185
Saritha, P., Vinitha, J., Sravya, S., & Vijay, V. (2020). 4-Bit Vedic Multiplier with 18nm FinFET Technology. Proceedings of the International Conference on Electronics and Sustainable Communication Systems (págs. 1079-1084). Coimbatore, India: IEEE. doi:10.1109/ICESC48915.2020.9155707
Timofeyev, V., Semenovskaya, E., & Faleeva, E. (2015). Thermal Analysis of High-Power Multi-Finger FET. 2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO) (págs. 239-241). Kyiv, UKraine: IEEE. doi:10.1109/ELNANO.2015.7146882
Trombini, H., Marmitt, G. G., Alencar, I., Baptista, D. L., Reboh, S., Mazen, F., . . . Grande, P. (August de 2019). Unraveling structural and compositional information in 3D FinFET electronic devices. Scientific Reports | (2019) 9:11629 | https://doi.org/10.1038/s41598-019-48117-0 1, 9, 1-7. doi:10.1038/s41598-019-48117-0
Zhang, G., Lai, J., Su, Y., Li, B., Li, B., Bu, J., & Yang, C.-F. (August de 2019). Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms. Material, 12(2601), 1-17. doi:10.3390/ma12162601
