Fabrication and electrical characterization of gallium arsenide p-n junction diodes
Abstract
Gallium arsenide p-n junction diodes were fabricated by the chemical vapor deposition technique using organometallic materials (MOCVD). Curves of electrical current versus forward bias voltage, I-V, were characterized and analyzed. Through the electrical characterizations, the fabrication of a p-n junction was verified, that is, the I-V curves show an exponential behavior, and from these I-V curves the ideality factor was also obtained. The ideality factor tells us what conduction mechanisms are occurring in the p-n junction diode and this told us that the conduction mechanisms occur mainly within the deplection region or region free of charge carriers, which is common in diodes made of gallium arsenide with a large band gap and low concentration of charge carriers on both p-type and n-type layers.
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