Effect of thermal annealing at low temperature for obtaining SnO thin films
Abstract
Due to its advantages, the SnO is an oxide semiconductor (OMS) used in p-channel thin-film transistors (TFTs) and considered for flexible and transparent applications. Although it is deposited by several techniques, it is used to apply an annealing >200 °C to obtain it, which is incompatible with the fabrication of TFTs with n-type OMS and with flexible and transparent substrates. Here we show the effect of the oxygen partial pressure (OPP) and the annealing ≤200 °C in the structural, optical, compositional, and electrical properties of the films deposited by sputtering. An OPP at 9% and an annealing between 190 and 200 °C induced a phases mixture of metallic tin and SnO with orientations to different planes, a transmittance up to 36% in the UV-Vis spectrum, an optical gap of ~2.83 eV and a resistivity of 1 mΩ×cm. This coincides with the reported data for the p-type SnO, which also enables its compatibility with the fabrication of TFTs with n-type OMS.
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References
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